Integration of 2D Tellurium onto Graphene-Silicon (G-Si) p-i-n Photodiode

• John Shaw, Computer Engineering, University of Delaware

• Tingyi Gu, Computer Engineering, University of Delaware

The primary objective of this research is to demonstrate the feasibility of mechanically transferring 2D Tellurene flakes onto Graphene-Silicon p-i-n Photodiodes, showcasing an alternative approach to conventional solution-based synthesis methods. While other studies have used solution-based synthesis for Tellurene, no present studies have mechanically moved Tellurene onto p-i-n Photodiodes. In this study, we propose a novel approach utilizing Polydimethylsiloxane (PDMS), two-sided tape, and a heated x-y-z movable stage to manually transfer Tellurene flakes onto the p-i-n trenches. By employing this mechanical transfer technique, we aim to provide evidence that 2D Tellurene integration can be accomplished without the use of traditional solution-based methods, offering potential advantages such as reduced contamination and improved control over flake placement. The successful integration of Tellurene onto Graphene-Silicon p-i-n Photodiodes could pave the way for advanced photodetectors with enhanced properties, opening up possibilities for applications in imaging, communications, and sensing technologies.